Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy
Research output: Contribution to journal › Journal article › Research › peer-review
Udgivelsesdato: 2008
| Original language | English |
|---|---|
| Journal | Applied Physics Letters |
| Volume | 92 |
| Issue number | 1 |
| Pages (from-to) | 012119 |
| ISSN | 0003-6951 |
| DOIs | |
| Publication status | Published - 2008 |
- Faculty of Science - Nanowires, Semiconductor, Molecular Beam Epitaxy, Indium Arsenide
Research areas
ID: 9513620